Properties of the Firs! Stage of Electrical Forming of Thin Film Metal-Dielectric-Metal Systems
The paper presents the results on studying the processes during the first stage of electrical forming of thin-film metal-dielectric-metal systems. Nature of a hydrogen-containing substance, liberated in the anode region, has been investigated. The most probable hydrogen-containing substance is atomic or molecular hydrogen. It has been shown that the growth of current though metal-dielectric-meta! system can be limited by a diffusion process.
Issue: 4, 2003
Series of issue: Science
Rubric: Brief Messages
Pages: 104 — 106
Downloads: 906