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Home Issues 2003 Year Issue №4 Properties of the Firs! Stage of Electrical Forming of Thin Film Metal-Dielectric-Metal Systems
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TSPU Bulletin is a peer-reviewed open-access scientific journal.

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Яндекс.Метрика

Properties of the Firs! Stage of Electrical Forming of Thin Film Metal-Dielectric-Metal Systems

Khaskelberg M.B., Kramor S.S.

Information About Author:

The paper presents the results on studying the processes during the first stage of electrical forming of thin-film metal-dielectric-metal systems. Nature of a hydrogen-containing substance, liberated in the anode region, has been investigated. The most probable hydrogen-containing substance is atomic or molecular hydrogen. It has been shown that the growth of current though metal-dielectric-meta! system can be limited by a diffusion process.

haskel-berg_m._b._104_106_4_36_2003.pdf ( 641.17 kB ) haskel-berg_m._b._104_106_4_36_2003.zip ( 569.59 kB )

Issue: 4, 2003

Series of issue: Science

Rubric: Brief Messages

Pages: 104 — 106

Downloads: 1475

For citation:


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