Properties of the Firs! Stage of Electrical Forming of Thin Film Metal-Dielectric-Metal Systems

Khaskelberg M. B., Kramor S. S.

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The paper presents the results on studying the processes during the first stage of electrical forming of thin-film metal-dielectric-metal systems. Nature of a hydrogen-containing substance, liberated in the anode region, has been investigated. The most probable hydrogen-containing substance is atomic or molecular hydrogen. It has been shown that the growth of current though metal-dielectric-meta! system can be limited by a diffusion process.

( 641.17 kB ) ( 569.59 kB )

Issue: 4, 2003

Series of issue: Science

Rubric: Brief Messages

Pages: 104 — 106

Downloads: 944