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Two-Electron Centers with Negative Correlation Energy in the Pb1-xGexSe and Pb1-xGexSe Solid Solutions // Tomsk State Pedagogical University Bulletin. 2006. Issue 6 (57). P. 19-23

It was shown that the charge state of the 73Ge antistructural defect arising in the anion sublattice of PbS and PbSe after radioactive decay of 73As does not depend on the Fermi level position. In contrast, the 73Ge center in the cation sublattice of PbS and PbSe acts like an electrically active substitutional impurity: in n-type samples the Mossbauer spectrum corresponds to the neutral state of a donor center (Ge2+), while in p-type samples it corresponds to the twice ionized state of this center (Ge4+). In the case of partially compensated samples of PbSe the fast electron exchange between neutral and ionized donor centers is revealed. It was demonstrated by means of the Mossbauer spectroscopy on the 119Sn isotope that the energy levels of germanium are above the levels formed by tin impurity atoms in these semiconductors