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A study of the first electrical forming stage of thin-film metal-insulator-metal systems // Tomsk State Pedagogical University Bulletin. 2000. Issue 9 (25). P. 13-18

In the paper the results of study of the first stage electrical forming in thin-film MIM - systems are presented. It was found, that there was a threshold voltage ~ 1,5 V below which the process of forming was strongly decelerated or absolutely stopped. The presence of a latent stage of forming was also detected. When investigating the conductance of MIM-system after the first stage of forming, two characteristic regions were chosen. In the first region (U

Properties of the Firs! Stage of Electrical Forming of Thin Film Metal-Dielectric-Metal Systems // Tomsk State Pedagogical University Bulletin. 2003. Issue 4 (36). P. 104-106

The paper presents the results on studying the processes during the first stage of electrical forming of thin-film metal-dielectric-metal systems. Nature of a hydrogen-containing substance, liberated in the anode region, has been investigated. The most probable hydrogen-containing substance is atomic or molecular hydrogen. It has been shown that the growth of current though metal-dielectric-meta! system can be limited by a diffusion process.